NJVMJD117T4G(2013) Просмотр технического описания (PDF) - ON Semiconductor
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NJVMJD117T4G Datasheet PDF : 10 Pages
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MJD112 (NPN), MJD117 (PNP)
MAXIMUM RATINGS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak
Rating
Symbol
VCEO
VCB
VEB
IC
Max
100
100
5
2
4
Unit
Vdc
Vdc
Vdc
Adc
Base Current
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
IB
50
mAdc
PD
W
20
W/°C
0.16
Total Power Dissipation (Note1)
@ TA = 25°C
Derate above 25°C
PD
W
1.75
W/°C
0.014
Operating and Storage Junction Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Case
RqJC
6.25
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
71.4
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Unit
°C/W
°C/W
http://onsemi.com
2
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