MJD112T4 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

MJD112T4

Complementary power Darlington transistors

STMicroelectronics 

Electrical characteristics

MJD112, MJD117

2.1

Typical characteristic (curves)

Figure 2. DC current gain

(VCE = 3 V NPN)

Figure 3. DC current gain

(VCE = - 3 V PNP)

Figure 4. DC current gain

(VCE = 5 V NPN)

Figure 5. DC current gain

(VCE = - 5 V PNP)

Figure 6. Collector-emitter saturation Figure 7. Collector-emitter saturation

voltage (NPN)

voltage (PNP)

4/10

Doc ID 3540 Rev 3

Share Link: