MJD112T4 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

MJD112T4

Complementary power Darlington transistors

STMicroelectronics 

MJD112, MJD117

Figure 8. Base-emitter saturation

voltage (NPN)

Electrical characteristics

Figure 9. Base-emitter saturation

voltage (PNP)

Figure 10. Base-emitter on voltage

(NPN)

Figure 11. Base-emitter on voltage

(PNP)

Figure 12. Resistive load switching time Figure 13. Resistive load switching time

(NPN, on)

(PNP, on)

Doc ID 3540 Rev 3

5/10

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