MTD6N20E Просмотр технического описания (PDF) - ON Semiconductor
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MTD6N20E Datasheet PDF : 9 Pages
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MTD6N20E
TYPICAL ELECTRICAL CHARACTERISTICS
12
TJ = 25°C
10
8
6
4
VGS = 10 V
9V
8V
7V
6V
2
5V
0
01 23 4 5 67 8 9
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
12
VDS ≥ 10 V
10
8
6
TJ = −55°C
25°C
100°C
4
2
0
2
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.2
VGS = 10 V
1.0
0.8
TJ = 100°C
0.6
25°C
0.4
−55 °C
0.2
0
0
2
4
6
8
10
12
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.70
TJ = 25°C
0.65
0.60
0.55
VGS = 10 V
0.50
0.45
15 V
0.40
0
2
4
6
8
10
12
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 3 A
2.0
1.5
1.0
0.5
0
− 50 − 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
VGS = 0 V
10
TJ = 125°C
100°C
25°C
1
0
50
100
150
200
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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