MTP12P10 Просмотр технического описания (PDF) - ON Semiconductor

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MTP12P10

Power MOSFET 12 Amps, 100 Volts P−Channel TO−220

ON Semiconductor 

1600

1200

800

400

0

0

MTP12P10

TC = 25°C

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

10

20

30

40

VDS, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Capacitance Variation

0

−2

TJ = 25°C

ID = 12 A

−4

−6

−8

−10

VDS = 30 V

−12

50 V

−14

80 V

−16

0 5 10 15 20 25 30 35 40 45 50

Qg, TOTAL GATE CHARGE (nC)

Figure 11. Gate Charge versus

Gate−To−Source Voltage

RESISTIVE SWITCHING

PULSE GENERATOR

Rgen

50 W

VDD

Vin

z = 50 W

RL

Vout

DUT

50 W

Figure 12. Switching Test Circuit

td(on)

ton

tr

90%

td(off)

toff

tf

90%

OUTPUT, Vout

10%

INPUT, Vin

10%

INVERTED

50%

PULSE WIDTH

90%

50%

Figure 13. Switching Waveforms

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