NIF62514T1 Просмотр технического описания (PDF) - ON Semiconductor
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NIF62514T1 Datasheet PDF : 6 Pages
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NIF62514
Preferred Device
Self−protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
• Current Limitation
• Thermal Shutdown with Automatic Restart
• Short Circuit Protection
• Low RDS(on)
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
• Pb−Free Packages are Available
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
(RGS = 1.0 MW)
VDSS
VDGR
40 Vdc
40 Vdc
Gate−to−Source Voltage
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Pulsed (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TA = 25°C (Note 3)
VGS
"16 Vdc
ID
ID
Internally
IDM
Limited
PD
1.1 W
1.73
8.93
Thermal Resistance, Junction−to−Tab
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
VDS = 40 Vdc, IL = 2.8 Apk, L = 80 mH,
RG = 25 W)
Operating and Storage Temperature Range
RqJT
RqJA
RqJA
EAS
TJ, Tstg
14 °C/W
114
72.3
300 mJ
−55 to °C
150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto min pad board.
2. Mounted onto 1″ pad board.
3. Mounted onto large heatsink.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 5
http://onsemi.com
6.0 AMPERES*
40 VOLTS CLAMPED
RDS(on) = 90 mW
Drain
Gate
Input
Overvoltage
Protection
RG
MPWR
ESD Protection
Temperature Current Current
Limit
Limit Sense
4
12
3
Source
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAM
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
A
= Assembly Location
Y
= Year
W
= Work Week
62514 = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*Limited by the current limit circuit.
Publication Order Number:
NIF62514/D
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