P4KE530 Просмотр технического описания (PDF) - General Semiconductor
Номер в каталоге
Компоненты Описание
производитель
P4KE530 Datasheet PDF : 2 Pages
| |||
MAXIMUM RATINGS AND CHARACTERISTIC CURVES P4KE530 AND P4KE550
FIG. 1 - PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
TA=25°C
10
FIG. 2 - PULSE DERATING CURVE
100
75
1.0
50
0.1
0.1µs
150
100
50
1.0µs
10µs
100µs
td, PULSE WIDTH, sec.
1.0ms
10ms
FIG. 3 - PULSE WAVEFORM
tr=10µsec.
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS
to 50% of IPPM
PEAK VALUE
IPPM
HALF VALUE - IPPM
2
10/1000µsec. WAVEFORM
as DEFINED by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t, TIME, ms
25
0
0 25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE, °C
10,000
1,000
APPLICATION NOTES
♦ Respect Thermal Resistance (PCB Layout) - as the temperature coefficient also
contributes to the clamping voltage.
♦ Select minimum breakdown voltage, so you get acceptable power dissipation and
PCB tie point temperature. Devices with higher breakdown voltage will have a
shorter conduction time and will dissipate less power.
♦ Clamping voltage is influenced by internal resistance - design approximation is
7V per 100mA slope.
♦ Keep temperature of TVS lower than TOPSwitch® as a recommendation.
♦ Maximum current is determined by the maximum TJ and can be higher than
300mA. Contact supplier for different clamping voltage / current arrangements.
♦ Minimum breakdown voltage can be customized for other applications.
Contact supplier.
Share Link: 