PBSS5350SS,115 Просмотр технического описания (PDF) - NXP Semiconductors.
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PBSS5350SS,115 Datasheet PDF : 14 Pages
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Nexperia
PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
7
8
Pinning
Description
emitter TR1
base TR1
emitter TR2
base TR2
collector TR2
collector TR2
collector TR1
collector TR1
Simplified outline Symbol
8
5
8765
TR1 TR2
1
4
1234
006aaa976
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
PBSS5350SS SO8
plastic small outline package; 8 leads; body width
3.9 mm
Version
SOT96-1
4. Marking
Table 5. Marking codes
Type number
PBSS5350SS
Marking code
5350SS
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
collector-base voltage open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current
-
ICM
peak collector current single pulse;
-
tp ≤ 1 ms
IB
base current
-
Ptot
total power dissipation Tamb ≤ 25 °C
[1] -
[2] -
[3] -
Max Unit
−50
V
−50
V
−5
V
−2.7 A
−5
A
−0.5 A
0.55 W
0.87 W
1.43 W
PBSS5350SS_1
Product data sheet
Rev. 01 — 3 April 2007
© Nexperia B.V. 2017. All rights reserved
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