PHD101NQ03LT Просмотр технического описания (PDF) - NXP Semiconductors.
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PHD101NQ03LT Datasheet PDF : 13 Pages
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NXP Semiconductors
PHD101NQ03LT
N-channel TrenchMOS logic level FET
80
IS
VGS = 0 V
(A)
60
03ai25
40
20
0
0
175 °C
Tj = 25 °C
0.3
0.6
0.9
1.2
VSD (V)
Fig 13. Source current as a function of source-drain voltage; typical values
PHD101NQ03LT_4
Product data sheet
Rev. 04 — 9 June 2009
© NXP B.V. 2009. All rights reserved.
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