RB451F Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

RB451F

Schottky barrier diode

TY Semiconductor 

Product specification

RB451F

Features

Small surface mounting type. (UMD3)

Low VF. (VF=0.45V Typ. at 100mA)

High reliability.

A b so lu te M a xim u m R a tin g s T a = 2 5

P aram eter

P eak reverse voltage

D C reverse voltage

M ean rectifying current

P eak forward surge current *

Junction tem perature

S torage tem perature

* 60H z for 1

Sym bol

VRM

VR

IO

IFSM

Tj

T stg

Lim its

40

40

0.1

1

125

-40 to +125

U nit

V

V

A

A

Electrical Characteristics Ta = 25

P aram eter

Symbol

Forward voltage

VF

Reverse current

IR

Capacitence between terminals

CT

Conditions

IF = 100 mA

IF = 10 mA

VR=10 V

VR=10 V , f=1MHz

Min

Typ

Max

Unit

0.55

V

0.34

30

A

6.0

pF

Marking

Marking

3C

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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