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SB120 Просмотр технического описания (PDF) - General Semiconductor

Номер в каталоге
Компоненты Описание
производитель
SB120
GE
General Semiconductor 
SB120 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES SB120 THRU SB160
1
0.75
0.5
FIG. 1 - FORWARD CURRENT DERATING CURVE
SB120 - SB140
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm) LEAD
LENGTH
SB150 & SB160
0.25
0
0
25
50
75 100 125 150 175
LEAD TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
10
TJ=125°C
TJ=150°C
1
0.1
PULSE WIDTH=300µs
1% DUTY CYCLE
TJ=25°C
SB120 - SB140
SB150 & SB160
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
400
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
100
––––––––– SB120 - SB140
- - - - - - - - - SB150 & SB160
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
40
(JEDEC Method)
30
20
10
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
100
SB120 - SB140
SB150 & SB160
10
TJ=125°C
1
0.1
TJ=75°C
0.01
0.001
0
TJ=25°C
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
10
0.1
1
10
REVERSE VOLTAGE, VOLTS
0.1
100
0.01
0.1
1
10
100
t, PULSE DURATION, sec.

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