SD101B Просмотр технического описания (PDF) - General Semiconductor

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SD101B

Schottky Diodes

General Semiconductor 

SD101A THRU SD101C

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Reverse Breakdown Voltage

at IR = 10 µA

SD101A V(BR)R

60

–

–

SD101B V(BR)R

50

–

–

SD101C V(BR)R

40

–

–

Leakage Current

at VR = 50 V

at VR = 40 V

at VR = 30 V

SD101A IR

SD101B IR

SD101C IR

–

–

200

–

–

200

–

–

200

Forward Voltage Drop

at IF = 1 mA

at IF = 15 mA

SD101A VF

–

–

0.41

SD101B VF

–

–

0.4

SD101C VF

–

–

0.39

SD101A VF

–

–

1

SD101B VF

–

–

0.95

SD101C VF

–

–

0.9

Junction Capacitance

at VR = 0 V, f = 1 MHz

SD101A Ctot

–

–

2.0

SD101B Ctot

–

–

2.1

SD101C Ctot

–

–

2.2

Reverse Recovery Time

at IF = IR = 5 mA, recover to 0.1 IR

trr

–

–

1

Thermal Resistance, Junction to Ambient Air

RthJA

–

–

0.31)

1) Valid provided that leads at a distance of 4 mm from case are kept ambient temperature

Unit

V

V

V

nA

nA

nA

V

V

V

V

V

V

pF

pF

pF

ns

K/mW

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