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Q67040-S4115-A2 Просмотр технического описания (PDF) - Siemens AG
Номер в каталоге
Компоненты Описание
производитель
Q67040-S4115-A2
SIPMOS® Power Transistor
Siemens AG
Q67040-S4115-A2 Datasheet PDF : 8 Pages
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8
SPD14N05
SPU14N05
Avalanche energy
E
AS
=
f
(
T
j
)
parameter:
I
D
=13.5 A,
V
DD
=25 V
R
GS
=25
Ω
, L = 571 µH
60
mJ
E
AS
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(
T
j
)
Typ. gate charge
V
GS
=
ƒ
(
Q
Gate
)
parameter:
I
D puls
= 14 A
16
V
V
GS
12
10
0,2
V
DS max
0,8
V
DS max
8
6
4
2
0
0 1 2 3 4 5 6 7 nC 9
Q
Gate
65
V
V
(BR)DSS
61
59
57
55
53
51
49
-60
-20
20
60 100 °C 180
T
j
Semiconductor Group
8
29/Jan/1998
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