2N4393 Просмотр технического описания (PDF) - Vishay Semiconductors
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2N4393 Datasheet PDF : 7 Pages
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2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
bog
10
gog
Transconductance vs. Drain Current
100
VGS(off) = –2 V
VDS = 10 V
f = 1 kHz
25_C
TA = –55_C
10
1
125_C
0.1
100
200
500
f – Frequency (MHz)
Output Characteristics
100
VGS(off) = –4 V
80
1000
60
40
20
0
0
VGS = 0 V
–0.5 V
–1.0 V
–1.5 V
–2.0 V
–2.5 V
2
4
6
8
10
VDS – Drain-Source Voltage (V)
SWITCHING TIME TEST CIRCUIT
4391
4392
4393
VGS(L)
RL*
ID(on)
–12 V
800 W
12 mA
–7 V
1600 W
6 mA
–5 V
3000 W
3 mA
*Non-inductive
INPUT PULSE
SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
www.vishay.com
7-6
1
0.1
1.0
10
ID – Drain Current (mA)
Transfer Characteristics
100
VGS(off) = –4 V
VDS = 20 V
80
TA = –55_C
60
25_C
40
20
0
0
125_C
–1
–2
–3
–4
–5
VGS – Gate-Source Voltage (V)
VDD
VGS(H)
VGS(L)
RL
OUT
VIN
Scope
1 kΩ
51 Ω
51 Ω
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
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