UT54ACTS74 Просмотр технического описания (PDF) - Unspecified
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UT54ACTS74 Datasheet PDF : 6 Pages
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UT54ACS74/UT54ACTS74
RADIATION HARDNESS SPECIFICATIONS 1
PARAMETER
Total Dose
SEU Threshold 2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm2/mg
MeV-cm2/mg
n/cm2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VDD
VI/O
TSTG
TJ
TLS
JC
II
PD
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to VDD +.3
-65 to +150
+175
+300
20
10
1
UNITS
V
V
C
C
C
C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VDD
VIN
TC
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to VDD
-55 to + 125
UNITS
V
V
C
47
RadHard MSI Logic
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