ZVN4306A(1994) Просмотр технического описания (PDF) - Diodes Incorporated.

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Компоненты Описание

производитель

ZVN4306A
(Rev.:1994)

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes Incorporated. 

ZVN4306A

ELECTRICAL CHARACTERISTICS

otherwise stated).

(at

Tamb

=

25°C

unless

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Input Capacitance (2) Ciss

350 pF

Common Source

Coss

Output Capacitance

(2)

140 pF

VDS=25 V, VGS=0V, f=1MHz

Reverse Transfer

Crss

Capacitance (2)

30

pF

Turn-On Delay Time

(2)(3)

Rise Time (2)(3)

td(on)

tr

8

ns

25

ns

VDD≈25V, VGEN=10V, ID=3A

Turn-Off Delay Time td(off)

(2)(3)

30

ns

Fall Time (2)(3)

tf

16

ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

THERMAL CHARACTERISTICS

PARAMETER

Thermal Resistance:Junction to Ambient

Junction to Case

SYMBOL

Rth(j-amb)

Rth(j-case)

MAX.

150

50

UNIT

°C/W

°C/W

1.0

0.75

0.50

0.25

-40 -20 0 20 40 60 80 100 120 140 160 180 200

T -Temperature (°C)

Derating curve

150

D.C.

t1 D=t1/tP

100

tP

D=0.6

50

D=0.2

D=0.1

D=0.05

0

Single Pulse

0.0001 0.001 0.01 0.1

1

10

100

Pulse Width (seconds)

Maximum transient thermal impedance

3-391

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