BDW94B Просмотр технического описания (PDF) - STMicroelectronics
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BDW94B Datasheet PDF : 6 Pages
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BDW93C/BDW94B/BDW94C
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
1 .5 6
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BDW94B
for BDW93C/94C
Tcase = 150 oC
for BDW94B
for BDW93C/94C
VCB = 80 V
VCB = 100 V
VCB = 80 V
VCB = 100 V
ICEO
Collector Cut-off
Current (IB = 0)
for BDW94B
for BDW93C/94C
VCB = 80 V
VCB = 100 V
IEBO Emitter Cut-off Current
(IC = 0)
VCEO(sus )∗ Collector-Emit ter
Sustaining Voltage
(IB = 0)
VEB = 5 V
IC = 100 mA
for BDW94B
for BDW93C/94C
VCE(sat )∗
VBE(s at)∗
Collector-Emitter
Saturation Voltage
Base-Emitt er
Saturation Voltage
IC = 5 A
IC = 10 A
IC = 5 A
IC = 10 A
IB = 20 mA
IB = 100 mA
IB = 20 mA
IB = 100 mA
hF E∗ DC Current Gain
IC = 3 A
IC = 5 A
IC = 10 A
VCE = 3 V
VCE = 3 V
VCE = 3 V
VF* Parallel-diode Forward IF = 5 A
Voltage
IF = 10 A
hfe
Small Signal Current IC = 1 A
Gain
f = 1 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 10 V
Min. Typ.
80
100
1000
750
100
1.3
1.8
20
Max.
100
100
5
5
1
1
2
2
3
2.5
4
20K
2
4
Unit
µA
µA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
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