BCR16CS-16LBB00 Просмотр технического описания (PDF) - Renesas Electronics

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производитель

BCR16CS-16LBB00

Triac Medium Power Use

Renesas Electronics 

BCR16CS-16LB

Preliminary

Electrical Characteristics

Parameter

Symbol Min. Typ. Max. Unit

Test conditions

Repetitive peak off-state current

IDRM

—

—

2.0

mA Tj = 150C, VDRM applied

On-state voltage

VTM

—

—

1.5

V Tc = 25C, ITM = 25 A,

Instantaneous measurement

Gate trigger voltageNote2



VFGT

—

—

1.5

V Tj = 25C, VD = 6 V, RL = 6 ,



VRGT

—

—

1.5

V

RG = 330 



VRGT

—

—

1.5

V

Gate trigger currentNote2



IFGT

—

—

30

mA Tj = 25C, VD = 6 V, RL = 6 ,



IRGT

—

—

30

mA RG = 330 



IRGT

—

—

30

mA

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltageNote5

VGD

0.2/0.1

—

Rth (j-c)

—

—

(dv/dt)c 10/1

—

—

V

Tj = 125C/150C, VD = 1/2 VDRM

1.4

C/W Junction to caseNote3 Note4

—

V/s Tj = 125C/150C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured on the T2 tab.

4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.

5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

1. Junction temperature

Tj = 125C/150C

2. Rate of decay of on-state commutating current

(di/dt)c = – 8.0 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

Time

VD

R07DS0226EJ0100 Rev.1.00

Dec 14, 2010

Page 2 of 7

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