HD122 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics
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HD122 Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 1/4
HD122
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Description
The HD122 is designed for medium power linear and switching
applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 4 A
IC Collector Current (Pulse) .............................................................................................. 0.1 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
100
-
-
*BVCEO
100
-
-
BVEBO
5
-
-
ICEO
-
-
2
ICBO
-
-
1
IEBO
-
-
2
*VCE(sat)1
-
-
2.5
*VCE(sat)2
-
-
2.8
*VBE(on)
-
-
2.5
*hFE1
1000
-
-
*hFE2
1000
-
-
Unit
Test Conditions
V
IC=1mA
V
IC=100mA
V
IE=100uA
mA VCE=50V
mA VCB=100V
mA VBE=5V
V
IC=1.5A, IB=30mA
V
IC=2A, IB=40mA
V
IC=3A, VCE=3V
IC=0.5A, VCE=3V
IC=3A, VCE=3V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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