BC856BWT1 Просмотр технического описания (PDF) - ON Semiconductor
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BC856BWT1 Datasheet PDF : 6 Pages
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BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC856 Series
BC857B Only
BC858 Series
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)EBO
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC856A, BC585A
BC856B, BC857B, BC858B
BC857C
ICBO
hFE
(IC = −2.0 mA, VCE = −5.0 V)
BC856A, BC858A
BC856B, BC857B, BC858B
BC857C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
−
125
220
420
−
−
−
−
−0.6
−
100
−
−
Typ
Max
Unit
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−15
nA
−
−4.0
mA
90
150
270
180
290
520
−
−
−0.7
−0.9
−
−
−
−
−
−
−
−
−
250
475
800
V
−0.3
−0.65
V
−
−
V
−0.75
−0.82
−
MHz
4.5
pF
10
dB
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