BU808 Просмотр технического описания (PDF) - STMicroelectronics
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BU808 Datasheet PDF : 7 Pages
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BU808DFI
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.4
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES
IEBO
VCE(sat)∗
Collector Cut-off
Current (VBE = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Saturation Voltage
VCE = 1400 V
VEB = 5 V
IC = 5 A
IB = 0.5 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 5 A
IB = 0.5 A
hFE∗ DC Current Gain
IC = 5 A
IC = 5 A
VCE = 5 V
VCE = 5 V Tj = 100 oC
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
VCC = 150 V
IB1 = 0.5 A
IC = 5 A
VBE(off) = -5 V
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
VCC = 150 V
IB1 = 0.5 A
Tj = 100 oC
IC = 5 A
VBE(off) = -5 V
VF
Diode Forward Voltage IF = 5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
60
20
2
0.8
Max.
400
100
1.6
2.1
230
3
0.8
3
Unit
µA
mA
V
V
µs
µs
µs
µs
V
Safe Operating Area
Thermal Impedance
2/7
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