IRFZ44NSTRRPBF Просмотр технического описания (PDF) - International Rectifier

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производитель

IRFZ44NSTRRPBF

HEXFET® Power MOSFET

International Rectifier 

IRFZ44NS/LPbF

1000

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

20µs PULSE WIDTH

1

TTJC==2255°C°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

4.5V

10

20µs PULSE WIDTH

1

TCJ == 11775°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

TJ = 25°C

100

TJ = 175°C

10

VDS = 25V

20µs PULSE WIDTH

1

A

4

5

6

7

8

9

10

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

2.5

ID = 41A

2.0

1.5

1.0

0.5

0.0

VGS = 10V

A

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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