MK10DN2M0AVMP12 Просмотр технического описания (PDF) - Freescale Semiconductor

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MK10DN2M0AVMP12

K10 Sub-Family

Freescale Semiconductor 

Peripheral operating requirements and behaviors

While different partitions of the FlexNVM are available, the intention is that a single

choice for the FlexNVM partition code and EEPROM data set size is used throughout the

entire lifetime of a given application. The EEPROM endurance equation and graph

shown below assume that only one configuration is ever used.

Writes_subsystem =

EEPROM – 2 × EEESPLIT × EEESIZE

EEESPLIT × EEESIZE

× Write_efficiency × nnvmcycd

where

• Writes_subsystem — minimum number of writes to each FlexRAM location for

subsystem (each subsystem can have different endurance)

• EEPROM — allocated FlexNVM for each EEPROM subsystem based on DEPART;

entered with the Program Partition command

• EEESPLIT — FlexRAM split factor for subsystem; entered with the Program

Partition command

• EEESIZE — allocated FlexRAM based on DEPART; entered with the Program

Partition command

• Write_efficiency —

• 0.25 for 8-bit writes to FlexRAM

• 0.50 for 16-bit or 32-bit writes to FlexRAM

• nnvmcycd — data flash cycling endurance (the following graph assumes 10,000

cycles)

K10 Sub-Family Data Sheet, Rev. 3, 6/2013.

36

Freescale Semiconductor, Inc.

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