BUK9K17-60E Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK9K17-60E Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK9K17-60E
Dual N-channel 60 V, 17 mΩ logic level MOSFET
10
Zth(j-mb)
(K/W)
δ = 0.5
1 0.2
0.1
0.05
10-1
0.02
003aaj500
P
δ=
tp
T
single shot
tp
t
T
10-2
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics FET1 and FET2
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9; Fig. 10
IDSS
drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11
VGS = 5 V; ID = 10 A; Tj = 175 °C;
Fig. 11; Fig. 12
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 11
Dynamic characteristics FET1 and FET2
QG(tot)
QGS
total gate charge
gate-source charge
ID = 10 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
BUK9K17-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 March 2014
Min Typ Max Unit
54
-
-
V
60
-
-
V
1.4 1.7 2.1 V
0.5 -
-
V
-
-
2.45 V
-
0.02 1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
14
17
mΩ
-
31.6 38.4 mΩ
-
12.4 15.6 mΩ
-
16.5 -
nC
-
3.3 -
nC
© NXP Semiconductors N.V. 2014. All rights reserved
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