SKM100GB125DN Просмотр технического описания (PDF) - Unspecified
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SKM100GB125DN Datasheet PDF : 6 Pages
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SKM 100 GB 125 DN
Absolute Maximum Ratings
Symbol Conditions 1)
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
IEC 60721-3-3
IEC 68 T.1
Inverse Diode
IF = –IC Tcase = 25/80 °C
IFM = –ICM Tcase = 25/80 °C; tp = 1 ms
IFSM
tp = 10 ms; sin.; Tj = 150 °C
I2t
tp = 10 ms; Tj = 150 °C
Characteristics
Symbol Conditions 1)
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
VGE = 0, IC = 4 mA
VGE = VCE, IC = 2 mA
VGE = 0
Tj = 25 °C
VCE = VCES Tj = 125 °C
VGE = 20 V, VCE = 0
IC = 75 A VGE = 15 V;
IC = 100 A Tj = 25 °C
VCE = 20 V, IC = 75 A
CCHC
Cies
Coes
Cres
LCE
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
td(on)
tr
td(off)
tf
Eon
Eoff
VCC = 600 V
VGE = –15 V / +15 V 3)
IC = 75 A, ind. load
RGon = RGoff = 8 Ω
Tj = 125 °C
Inverse Diode 8)
VF = VEC IF = 75 A VGE = 0 V;
VF = VEC IF = 100 A Tj = 25 (125) °C
VTO
Tj = 125 °C
rt
Tj = 125 °C
IRRM
IF = 75 A; Tj = 25 (125) °C 2)
Qrr
IF = 75 A; Tj = 25 (125) °C 2)
Thermal characteristics
Rthjc
Rthjc
Rthch
per IGBT
per diode
per module
Values
1200
1200
100 / 80
200 / 160
± 20
690
–40 ... + 150 (125)
2500
class 3K7/IE32
40/125/56
95 / 65
200 / 160
720
2600
Units
V
V
A
A
V
W
°C
V
SEMITRANS® M
Ultra Fast IGBT Modules
SKM 100 GB 125 DN
A
A
A
A2s
SEMITRANS 2N (low inductance)
min. typ.
≥ VCES
4,5
5,5
0,1
6
3,3
3,8
31
5
720
380
80
40
360
20
9
3,5
max.
6,5
1,5
300
3,65
350
6,6
900
500
25
Units
V
V
mA
mA
nA
V
V
S
pF
nF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
2,0(1,8)
2,5
V
2,25(2,05)
V
1,2
V
12
15
mΩ
27(40)
A
3(10)
µC
0,18 °C/W
0,50 °C/W
0,05 °C/W
GB
Features
• N channel, homogeneous Si
• Low inductance case
• Short tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * Icnom
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology
• Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications
• Switched mode power supplies
at fsw > 20 kHz
• Resonant inverters up to
100 kHz
• Inductive heating
• Electronic welders at
fsw > 20 kHz
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 600 V,
–diF/dt = 800 A/µs, VGE = 0 V
3) Use VGEoff = –5... –15 V
8) CAL = Controlled Axial Lifetime
Technology
© by SEMIKRON
000831
B 6 – 37
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