APT30GT60BRDQ2G Просмотр технического описания (PDF) - Microsemi Corporation

Номер в каталоге

Компоненты Описание

производитель

APT30GT60BRDQ2G

Thunderbolt IGBT®

Microsemi Corporation 

DYNAMIC CHARACTERISTICS

Symbol

Cies

Coes

Cres

VGEP

Qg

Qge

Qgc

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge 3

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

SSOA Switching Safe Operating Area

td(on)

tr

td(off)

tf

Eon1

Eon2

Eoff

td(on)

tr

td(off)

tf

Eon1

Eon2

Eoff

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy 4

Turn-on Switching Energy (Diode) 5

Turn-off Switching Energy 6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy 4 4

Turn-on Switching Energy (Diode) 55

Turn-off Switching Energy 6

APT30GT60BRDQ2(G)

Test Conditions

MIN TYP MAX

Capacitance

VGE = 0V, VCE = 25V

f = 1 MHz

1600

150

92

Gate Charge

VGE = 15V

VCE = 300V

IC = 30A

7.5

145

10

TJ = 150°C, RG = 10Ω, VGE =

60

15V, L = 100µH,VCE = 600V

Inductive Switching (25°C) 1 10

VCC = 400V

VGE = 15V

IC = 30A

RG = 10Ω

TJ = +25°C

12

20

225

80

525

605

Inductive Switching (125°C)

600

VCC = 400V

12

VGE = 15V

IC = 30A

RG = 10Ω

TJ = +125°C

20

245

100

570

965

UNIT

pF

V

nC

A

ns

µJ

ns

µJ

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol

RθJC

RθJC

WT

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

MIN TYP

5.9

MAX

.50

.67

UNIT

°C/W

gm

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages

3 See MIL-STD-750 Method 3471.

4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.

5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the specifications and information contained herein.

Share Link: