2N5004(2001) Просмотр технического описания (PDF) - Microsemi Corporation
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2N5004 Datasheet PDF : 2 Pages
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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534
Devices
2N5002
2N5004
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 250C (1)
@ TC = 250C (2)
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
IC(3)
PT
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
Thermal Resistance, Junction-to-Ambient
RθJA
1) Derate linearly 11.4 mW/0C for TA > 250C
2) Derate linearly 331 mW/0C for TC > 250C
3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1%
Value
80
100
5.5
5.0
10
2.0
58
-65 to +200
Max.
3.0
88
Units
Vdc
Vdc
Vdc
Adc
W
0C
Unit
0C/W
0C/W
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc,
Collector-Emitter Cutoff Current
VCE = 40 Vdc, IB = 0
Collector-Emitter Cutoff Current
V(BR)CEO
ICEO
VCE = 60 Vdc, VBE = 0
ICES
VCE = 100 Vdc, VBE = 0
Emitter-Base Cutoff Current
VBE = 4.0 Vdc, IC = 0
IEBO
VBE = 5.5 Vdc, IC = 0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
TO-59*
*See appendix A for
package outline
Min. Max.
Unit
80
Vdc
50
µAdc
1.0
µAdc
1.0
mAdc
1.0
mAdc
1.0
mAdc
120101
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