GIB1403-E3 Просмотр технического описания (PDF) - Vishay Siliconix
Номер в каталоге
Компоненты Описание
производитель
GIB1403-E3 Datasheet PDF : 4 Pages
| |||
GIB1401 thru GIB1404
Vishay General Semiconductor
100
TJ = 125 °C
TJ = 25 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
TJ = 125 °C
10
TJ = 100 °C
1
0.1
0.01
0
TJ = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Document Number: 88632 For technical questions within your region, please contact one of the following:
Revision: 30-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Share Link: 