IRFP254NPBF Просмотр технического описания (PDF) - Vishay Siliconix

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Компоненты Описание

производитель

IRFP254NPBF

Power MOSFET

Vishay Siliconix 

IRFP254N, SiHFP254N

Vishay Siliconix

25

20

15

10

5

0

25

50

75 100 125 150 175

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

1

VDS

VGS

RG

RD

D.U.T.

VGS

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

0.01

0.00001

PDM

(THERMAL RESPONSE)

0.0001

0.001

t 1, Rectangular Pulse Duration (s)

t1

t2

Notes:

1. Duty factor D = t1/ t2

2. Peak TJ = PDM x ZthJC + TC

0.01

0.1

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91213

S09-0006-Rev. A, 19-Jan-09

www.vishay.com

5

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