BC847BPDXV6 Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
BC847BPDXV6 Datasheet PDF : 6 Pages
| |||
BC847BPDXV6, SBC847BPDXV6
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 μA, VEB = 0)
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
V(BR)CBO
V(BR)EBO
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = −10 μA, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Output Capacitance
Cob
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
NF
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
Min
−45
−50
−50
−5.0
−
−
−
200
−
−
−
−
−0.6
−
100
−
−
Typ
Max
Unit
V
−
−
V
−
−
V
−
−
V
−
−
−
−15
nA
−
−4.0
μA
−
150
−
290
475
V
−
−0.3
−
−0.65
V
−0.7
−
−0.9
−
V
−
−0.75
−
−0.82
−
−
MHz
−
4.5
pF
−
10
dB
http://onsemi.com
3
Share Link: 