NSVBAS21HT3G(2013) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

производитель

NSVBAS21HT3G
(Rev.:2013)

High Voltage Switching Diode

ON Semiconductor 

BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 200 Vdc)

(VR = 200 Vdc, TJ = 150°C)

Reverse Breakdown Voltage

(IBR = 100 mAdc)

IR

−

−

V(BR)

250

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

Diode Capacitance

(VR = 0, f = 1.0 MHz)

VF

−

−

CD

−

Reverse Recovery Time

(IF = IR = 30 mAdc, RL = 100 W)

trr

−

Max

Unit

0.1

100

−

1000

1250

5.0

50

mAdc

Vdc

mV

pF

ns

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

D.U.T.

0.1 mF

tr

tp

t

10%

50 W INPUT

SAMPLING

VR

OSCILLOSCOPE

90%

INPUT SIGNAL

IF

trr

t

iR(REC) = 3.0 mA

IR

OUTPUT PULSE

(IF = IR = 30 mA; MEASURED

at iR(REC) = 3.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

http://onsemi.com

2

Share Link: