SI4431CDY(2008) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4431CDY Datasheet PDF : 4 Pages
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SPICE Device Model Si4431CDY
Vishay Siliconix
SPECIFICATIONS
(T
J
=
25°C
UNLESS
OTHERWISE
NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Drain-Source On-State Resistancea
V
GS(th)
r
DS(on)
Forward Transconductancea
g
fs
Diode Forward Voltage
V
SD
Dynamicb
Input Capacitance
C
iss
Output Capacitance
Coss
Reverse Transfer Capacitance
C
rss
Total Gate Charge
Q
g
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V
DS
=
V,
GS
I
D
=
−250
μA
VGS = −10 V, ID = −7 A
VGS = −4.5 V, ID = −5.6 A
VDS = −15 V, ID = −7 A
IS = −5.6 A
V = −15 V, V = 0 V, f = 1 MHz
DS
GS
V
DS
=
−15
V,
V
GS
=
−10
V,
I
D
=
−7
A
V = −15 V, V = −4.5 V, I = −7 A
DS
GS
D
Simulated Measured
Data
Data
1.8
0.026
0.037
10
−0.81
0.026
0.037
18
−0.71
1000
183
144
20
11
3.5
5.5
1006
180
145
25
13
3.5
5.5
Unit
V
Ω
S
V
pF
nC
www.vishay.com
2
Document Number: 68436
S-81903⎯Rev. A, 25-Aug-08
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