AM29F100T-75ECB Просмотр технического описания (PDF) - Advanced Micro Devices

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производитель

AM29F100T-75ECB

1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

Advanced Micro Devices 

AMD

ERASE AND PROGRAMMING PERFORMANCE

Limits

Parameter

Typ

Max

Unit

Comments

Sector Erase Time

1.0

30

(Note 1)

sec

Excludes 00H programming prior to erasure

Chip Erase Time

5

75

(Note 1)

sec

Excludes 00H programming prior to erasure

Byte Programming Time

14

1000

µs

(Note 1) (Note 3)

Excludes system-level overhead (Note 4)

Chip Programming Time

1.8

12.5

sec

(Note 1) (Notes 3,5)

Excludes system-level overhead (Note 4)

Notes:

1. 25°C, 5 V VCC, 100,000 cycles.

2. Although Embedded Algorithms allow for a longer chip program and erase time, the actual time will be considerably less since

bytes program or erase significantly faster than the worst case byte.

3. Under worst case condition of 90°C, 4.5 V VCC, 100,000 cycles.

4. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each

byte. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00H before erasure.

5. The Embedded Algorithms allow for 48 ms byte program time. DQ5 = “1” only after a byte takes the theoretical maximum time

to program. A minimal number of bytes may require significantly more programming pulses than the typical byte. The majority

of the bytes will program within one or two pulses. This is demonstrated by the Typical and Maximum Programming Times

listed above.

LATCHUP CHARACTERISTICS

Input Voltage with respect to VSS on all I/O pins

VCC Current

Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.

TSOP PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz.

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Min

–1.0 V

–100 mA

Max

VCC + 1.0 V

+100 mA

Typ Max Unit

6

7.5

pF

8.5

12

pF

8

10

pF

SO PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

Input Capacitance

COUT

Output Capacitance

CIN2

Control Pin Capacitance

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz.

Test Setup

VIN = 0

VOUT = 0

VPP = 0

Typ Max Unit

6

7.5

pF

8.5

12

pF

8

10

pF

DATA RETENTION

Parameter

Minimum Pattern Data Retention Time

Test Conditions

150°C

125°C

Min

Unit

10

Years

20

Years

1-64

Am29F100T/Am29F100B

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