2SB0943
Power Transistors
PC Ta
IC VCE
VCE(sat) IC
50
–6
–100
(1) TC=Ta
TC=25˚C
IC/IB=20
(2) With a 100 × 100 × 2mm
Al heat sink
40
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
30
(1)
20
e/ 10
(2)
. (3)
e (4)
c tag 0
s 0 20 40 60 80 100 120 140 160
n d le Ambient temperature Ta (˚C)
–5
IB=–100mA
–4
–80mA
–60mA
–3
–40mA
–30mA
–2
–20mA
–16mA
–1
–12mA
–8mA
–4mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
–30
–10
–3
–1
– 0.3
– 0.1
– 0.03
TC=100˚C
–25˚C
25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
a e t lifecyc –100
n u duc –30
Pro –10
VBE(sat) IC
IC/IB=20
te tin four . –3
ing type tion –1
in n llow nce e ed rma –0.3
s fo na typ typ info n/ –0.1
TC=–100˚C
–25˚C
25˚C
a o lude ainte nce ued pe test .jp/e –0.03
inc m na tin ty la .co –0.01
c d te n d t ic – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
ed ne in o e u n Collector current IC (A)
10000
3000
1000
300
100
30
10
hFE IC
VCE=–2V
TC=100˚C
25˚C
–25˚C
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
10000
3000
1000
fT IC
VCE=–10V
f=10MHz
TC=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
M isiscontinu pla mlanaed diissccontinUuRL ab.poanaso 10000
/D p d ing icon 3000
D nce llow em 1000
na it fo w.s 300
ainte e vis ://ww 100
M as ttp 30
Ple h 10
Cob VCB
IE=0
f=1MHz
TC=25˚C
ton, tstg, tf IC
100
Pulsed tw=1ms
Duty cycle=1%
30
IC/IB=10
(–IB1=IB2)
10
VCC=–50V
TC=25˚C
3
1
tstg
0.3
ton
0.1
tf
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
TC=25˚C
–10 ICP
–3
IC
–1
10ms
– 0.3
– 0.1
t=0.5ms
1ms
DC
3
0.03
– 0.03
1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
0.01
0
– 0.8
–1.6
–2.4
–3.2
Collector current IC (A)
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2