G10N60A Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
G10N60A Datasheet PDF : 12 Pages
| |||
SGP10N60A, SGB10N60A
SGW10N60A
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=400V,IC=10A,
VGE=0/15V,
RG=25Ω,
Lσ1) =180nH,
Cσ1) =55pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
178
24
0.15
0.17
0.320
34 ns
15
214
29
0.173 mJ
0.221
0.394
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=400V,IC=10A,
VGE=0/15V,
RG=25Ω
Lσ1) =180nH,
Cσ1) =55pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
198
26
0.260
0.280
0.540
34 ns
15
238
32
0.299 mJ
0.364
0.663
1) Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Jul-02
Share Link: 