2N5114 Просмотр технического описания (PDF) - Vishay Semiconductors
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2N5114 Datasheet PDF : 5 Pages
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2N5114/5115/5116
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
200
–100
IDSS
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
18
250
gfs and gos @ VDS = –15 V
VGS = 0 V, f = 1 kHz
160
–80
15
200
rDS
120
gfs
–60
12
150
gos
80
–40
9
100
40
rDS @ ID = –1 mA, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
0
0
2
4
6
8
VGS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Drain Current
250
TA = 25_C
200
VGS(off) = 1.5 V
150
3V
100
5V
50
–20
0
10
0
–1
–10
ID – Drain Current (mA)
Turn-On Switching
50
tr approximately independent of ID
VDD = –10 V, RG = 220 W
VGS(H) = 10 V, VGS(L) = 0 V
40
–100
30 tON @ ID = –5 mA
20
tON @ ID = –10 mA
10
tr @ ID = –5 mA
0
0
1
2
3
4
5
VGS(off) – Gate-Source Cutoff Voltage (V)
Document Number: 70260
S-04030—Rev. E, 04-Jun-01
6
50
3
0
2
4
0
6
8
10
VGS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
300
ID = –1 mA
rDS changes X 0.7%/_C
240
180
VGS(off) = 1.5 V
3V
120
5V
60
0
–55 –35 –15 5 25 45 65 85 105 125
TA – Temperature (_C)
Turn-Off Switching
20
tf VGS(off) = 1.5 V
16
5V
12
td(off) VGS(off) = 1.5 V
8
5V
4
VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V
0
0
–3
–6
–9
–12
–15
ID – Drain Current (mA)
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