Electrical Characteristics
Apply over all recommended conditions; typical value is measured at VCC = 5 V, VDD – VSS = 30 V, VE – VSS = 0 V, and
TA = 25°C; unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ. Max. Units Figure
Gate Drive Channel
VF
Δ(VF/TA)
Input Forward Voltage
Temperature Coefficient
of Forward Voltage
IF = 10 mA
1.10
1.45
-1.5
BVR
Input Reverse
IR = 10 µA
5
Breakdown Voltage
CIN
Input Capacitance
f = 1 MHz, VF = 0 V
60
IFLH
Threshold Input Current, IO = 0 mA, VO > 5 V
2.5
Low to High
VFHL
Threshold Input Voltage, IO = 0 mA, VO < 5 V
0.8
High to Low
IOH
High Level Output
Current
VO = VDD – 3 V,
IF = 10 mA
-1.0
-2.5
VO = VDD – 6 V,
-2.5
IF = 10 mA(11)
IOL
Low Level Output
VO = VSS + 3 V, IF = 0 mA
1
3
Current
VO = VSS + 6 V,
2.5
IF = 0 mA(12)
IOLF
Low Level Output
VO – VSS = 14 V
Current During Fault
Condition
70
125
VOH
High Level Output
Voltage
IF = 10 mA,
IO = –100 mA(13)(14)(15)
VDD – 1.0 VDD – 0.2
VOL
Low Level Output Voltage IF = 0 mA, IO = 100 mA
0.1
1.80
7.0
170
0.5
IDDH
High Level Supply
Current
VO = Open, IO = 0 mA
IDDL
Low Level Supply
Current
VO = Open, IO = 0 mA
IEL
VE Low Level Supply
Current
IEH
ICHG
VE High Level Supply
Current
Blanking Capacitor
Charge Current
VDESAT = 2 V(15)(16)
IDSCHG
Blanking Capacitor
Discharge Current
VDESAT = 7 V
VUVLO+
VUVLO-
UVLOHYS
VDESAT
VCLAMP_THRES
Under-Voltage Lockout
Threshold(14)
Under-Voltage Lockout
Threshold Hysteresis
DESAT Threshold(14)
Clamping Threshold
Voltage
IF = 10 mA, VO > 5 V
IF = 10 mA, VO < 5 V
VDD – VE > VULVO–
ICLAMPL
Clamp Low Level Sinking VO = VSS + 2.5 V
Current
-0.8
-0.50
-0.33
10
10.8
9.8
6.0
0.35
2.5
2.5
-0.5
-0.25
-0.25
40
11.7
10.7
1.0
6.5
2.0
1.10
5.0
5.0
-0.13
12.7
11.7
7.2
V
5
mV/ºC
V
pF
mA
30
V
31
A
6, 10,
32
A
A
7, 11,
A
33
mA
34
V
8, 10,
35
V
9, 11,
36
mA 12, 13,
37
mA 12, 13,
38
mA
38
mA
37
mA 14, 39
mA
39
V
40
V
V
V 15, 39
V
41
A 16, 42
©2014 Fairchild Semiconductor Corporation
FOD8333 Rev. 1.0.3
7
www.fairchildsemi.com