FDMS3615S Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDMS3615S Datasheet PDF : 16 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 16 A
VGS = 0 V, IS = 18 A
(Note 2) Q1
(Note 2) Q2
trr
Reverse Recovery Time
Q1
Q1
IF = 16 A, di/dt = 100 A/s
Q2
Qrr
Reverse Recovery Charge
Q2
IF = 18 A, di/dt = 300 A/s
Q1
Q2
0.8 1.2
0.8 1.2
V
19
24
34
38
ns
6
19
12
35
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
d. 125 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4. EAS of 38 mJ is based on starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 16 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 14.6 A.
5. EAS of 98 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 14 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 21 A.
©2011 Fairchild Semiconductor Corporation
3
FDMS3615S Rev.C6
www.fairchildsemi.com
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