FDMS3615S Просмотр технического описания (PDF) - Fairchild Semiconductor

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FDMS3615S

PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET

Fairchild Semiconductor 

Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted

45

36

27

18

9

0

0.0

VGS = 4 V

VGS = 3.5 V

VGS = 10 V

VGS = 6 V

VGS = 3 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

0.5

1.0

1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

8

VGS = 3 V

6

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

4

VGS = 3.5 V

2

VGS = 4 V

VGS = 6 V

VGS = 10 V

0

0

9

18

27

36

45

ID, DRAIN CURRENT (A)

Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6

ID = 16 A

VGS = 10 V

1.4

1.2

1.0

0.8

0.6

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figure 3. Normalized On Resistance

vs Junction Temperature

30

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

25

ID = 16 A

20

15

TJ = 125 oC

10

5

TJ = 25 oC

0

2

4

6

8

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance vs Gate to

Source Voltage

45

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

36

VDS = 5 V

27

TJ = 150 oC

18

TJ = 25 oC

9

TJ = -55 oC

0

1

2

3

4

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

50

VGS = 0 V

10

1

TJ = 150 oC

0.1

0.01

TJ = 25 oC

TJ = -55 oC

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2011 Fairchild Semiconductor Corporation

4

FDMS3615S Rev.C6

www.fairchildsemi.com

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