NVD5490NLT4G Просмотр технического описания (PDF) - ON Semiconductor
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NVD5490NLT4G Datasheet PDF : 6 Pages
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NVD5490NL
TYPICAL CHARACTERISTICS
800
600
Ciss
400
VGS = 0 V
TJ = 25°C
200
Crss
Coss
0
0
10
20
30
40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
100
VDD = 48 V
ID = 9 A
VGS = 4.5 V
10
tr
tf
td(off)
td(on)
10
QT
8
6
Qgs
Qgd
4
2
VDS = 48 V
ID = 9 A
TJ = 25°C
0
0
5
10
15
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
25
VGS = 0 V
TJ = 25°C
20
15
10
1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
VGS = 10 V
Single Pulse
10 TC = 25°C
1 mS 100 mS 10 mS
10 mS
dc
1
5
0
0
0.5
1.0
1.5
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
25
ID = 17 A
20
15
0.1
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.001
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
5
0
25
50
75
100
125
150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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