STGW25H120DF2 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

STGW25H120DF2

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

STMicroelectronics 

STGW25H120DF2,

STGWA25H120DF2

Trench gate field-stop IGBT, H series

1200 V, 25 A high speed

Datasheet - production data

72













72ORQJOHDGV

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 2.1 V (typ.) @ IC = 25 A

• 5 µs minimum short circuit withstand time at

TJ=150 °C

• Safe paralleling

• Very fast recovery antiparallel diode

• Low thermal resistance

Figure 1. Internal schematic diagram

Applications

• Uninterruptible power supply

• Welding machines

• Photovoltaic inverters

• Power factor correction

• High frequency converters

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the H series

of IGBTs, which represent an optimum

compromise between conduction and switching

losses to maximize the efficiency of high

switching frequency converters. Moreover, a

slightly positive VCE(sat) temperature coefficient

and very tight parameter distribution result in

safer paralleling operation.

Order code

STGW25H120DF2

STGWA25H120DF2

Table 1. Device summary

Marking

Package

G25H120DF2

TO-247

G25H120DF2

TO-247 long leads

Packaging

Tube

Tube

March 2015

This is information on a product in full production.

DocID023752 Rev 4

1/17

www.st.com

Share Link: