STGWA25H120DF2 Просмотр технического описания (PDF) - STMicroelectronics

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STGWA25H120DF2

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

STMicroelectronics 

STGW25H120DF2, STGWA25H120DF2

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Parameter

Value

VCES Collector-emitter voltage (VGE = 0)

IC

ICP (1)

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

Pulsed collector current

VGE Gate-emitter voltage

IF

IFP (1)

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

Pulsed forward current

PTOT Total dissipation at TC = 25 °C

TJ

Operating junction temperature

TSTG Storage temperature range

1. Pulse width limited by maximum junction temperature.

1200

50

25

100

±20

50

25

100

375

– 55 to 175

– 55 to 150

Symbol

RthJC

RthJC

RthJA

Table 3. Thermal data

Parameter

Thermal resistance junction-case IGBT

Thermal resistance junction-case diode

Thermal resistance junction-ambient

Value

0.4

1.47

50

Unit

V

A

A

A

V

A

A

A

W

°C

Unit

°C/W

°C/W

°C/W

DocID023752 Rev 4

3/17

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