STGW25H120DF2, STGWA25H120DF2
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
tr
Current rise time
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 600 V, IC = 25 A,
RG = 10 Ω, VGE = 15 V,
see Figure 28
Ets Total switching losses
td(on) Turn-on delay time
tr
Current rise time
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 600 V, IC = 25 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 28
Ets Total switching losses
tsc
Short-circuit withstand time
VCE = 600 V, VGE = 15 V,
TJ = 150 °C,
1. Energy losses include reverse recovery of the external diode.
2. Turn-off losses include also the tail of the collector current.
-
29
- ns
-
12
- ns
- 1774 - A/µs
130 - ns
- 106 - ns
- 0.6 - mJ
- 0.7 - mJ
- 1.3 - mJ
- 27.5 - ns
- 13.5 - ns
- 1522 - A/µs
- 139 - ns
- 200 - ns
- 1.05 - mJ
- 1.65 - mJ
- 2.7 - mJ
5
- µs
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Reverse recovery time
-
303
-
ns
Qrr
Reverse recovery charge
- 0.93 - µC
Irrm
Reverse recovery current
IF = 25 A, VR = 600 V,
di/dt=500 A/µs, VGE = 15 V,
-
15.3
-
A
dIrr/ /dt
Peak rate of fall of reverse see Figure 28
recovery current during tb
-
400 - A/µs
Err
Reverse recovery energy
- 0.52 - mJ
trr
Reverse recovery time
-
508
-
ns
Qrr
Reverse recovery charge
- 2.71 - µC
Irrm
Reverse recovery current
IF = 25 A, VR = 600 V,
di/dt=500 A/µs, VGE = 15 V,
-
23
-
A
dIrr/ /dt
Peak rate of fall of reverse TJ = 175 °C, see Figure 28
recovery current during tb
-
680 - A/µs
Err
Reverse recovery energy
- 1.56 - mJ
DocID023752 Rev 4
5/17
17