STGWA25H120DF2 Просмотр технического описания (PDF) - STMicroelectronics

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STGWA25H120DF2

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

STMicroelectronics 

STGW25H120DF2, STGWA25H120DF2

Electrical characteristics

Figure 20. Switching times vs. gate resistance Figure 21. Reverse recovery current vs. diode

current slope

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Figure 22. Reverse recovery time vs. diode Figure 23. Reverse recovery charge vs. diode

current slope

current slope

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Figure 24. Reverse recovery energy vs. diode

current slope

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Figure 25. Diode VF vs. forward current

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DocID023752 Rev 4

9/17

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