IPA030N10N3G Просмотр технического описания (PDF) - Infineon Technologies
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IPA030N10N3G Datasheet PDF : 9 Pages
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IPA030N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=50 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=50 V, V GS=10 V,
-
t d(off)
I D=79 A, R G,ext=1.6 W
-
tf
-
11100 14800 pF
1940 2580
69
-
42
- ns
38
-
112
-
37
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
47
- nC
Q gd
-
27
-
Q sw
V DD=50 V, I D=79 A,
V GS=0 to 10 V
-
41
-
Qg
-
155
206
V plateau
-
4.2
-V
Q oss
V DD=50 V, V GS=0 V
-
205
273 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=79 A,
T j=25 °C
t rr
V R=50 V, I F=25 A,
Q rr
di F/dt =100 A/µs
4) See figure 16 for gate charge parameter definition
-
-
70 A
-
-
316
-
0.9
1.2 V
-
80
- ns
-
190
- nC
Rev. 2.2
page 3
2013-08-27
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