MSS1P3L(2008) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
MSS1P3L Datasheet PDF : 4 Pages
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New Product
MSS1P2L & MSS1P3L
Vishay General Semiconductor
10
TJ = 150 °C
TJ = 125 °C
1
0.1
TJ = 25 °C
1000
100
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
TJ = 150 °C
10
1
TJ = 125 °C
1000
100
Junction to Ambient
0.1
10
0.01
TJ = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
1000
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMP
Cathode Band
0.059 (1.50)
0.043 (1.10)
0.030 (0.75)
0.022 (0.55)
0.055 (1.40)
0.047 (1.20)
0.039 (0.98)
0.031 (0.78)
0.030 (0.75)
0.022 (0.55)
0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30)
Mounting Pad Layout
0.079
(2.00)
0.032
(0.80)
0.029 (0.73)
0.025 (0.63)
0.011 (0.27)
0.005 (0.12)
0.043
(1.10)
0.020
(0.50)
0.032
(0.80)
Document Number: 89020 For technical questions within your region, please contact one of the following:
Revision: 04-Aug-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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