BYV29F-500 Просмотр технического описания (PDF) - NXP Semiconductors.
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Компоненты Описание
производитель
BYV29F-500 Datasheet PDF : 9 Pages
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NXP Semiconductors
Rectifier diodes
ultrafast
30 IF / A
Tj=150 C
Tj=25 C
20
typ
10
BYW29
max
0
0
0.5
1
1.5
2
VF / V
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Qs / nC
1000
IF = 10 A
100
2A
10
1
1.0
10
100
-dIF/dt (A/us)
Fig.8. Maximum Qs at Tj = 25˚C
Product specification
BYV29F, BYV29X series
10 Transient thermal impedance, Zth j-hs (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV29F
Fig.9. Transient thermal impedance Zth j-hs= f(tp)
February 1999
4
Rev 1.400
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