BUZ100SL Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BUZ100SL

SIPMOS Power Transistor

Infineon Technologies 

BUZ 100SL

Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

VDS≥2*ID*RDS(on)max , ID = 50 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 4.5 V, ID = 70 A,

RG = 2.2 Ω

gfs

Ciss

Coss

Crss

t d(on)

25 58

-S

- 2130 2660 pF

- 600 750

- 320 400

-

15 25 ns

Rise time

VDD = 30 V, VGS = 4.5 V, ID = 70 A,

RG = 2.2 Ω

tr

-

70 105

Turn-off delay time

VDD = 30 V, VGS = 4.5 V, ID = 70 A,

RG = 2.2 Ω

t d(off)

-

40 60

Fall time

VDD = 30 V, VGS = 4.5 V, ID = 70 A,

RG = 2.2 Ω

tf

-

25 40

Data Sheet

3

05.99

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