2N5883 Просмотр технического описания (PDF) - Central Semiconductor
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2N5883 Datasheet PDF : 3 Pages
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2N5883 2N5884 PNP
2N5885 2N5886 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5883, 2N5885
series types are complementary silicon epitaxial base
transistors designed for power amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
CContinuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N5883
2N5885
2N5884
2N5886
60
80
60
80
5.0
25
50
7.5
200
-65 to +200
0.875
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
ICEO
VCB=Rated VCBO
VCE=½Rated VCEO
ICEX
VCE=Rated VCEO, VBE=1.5V
ICEX
VCE=Rated VCEO, VBE=1.5V, TC=150°C
IEBO
VEB=5.0V
BVCEO IC=200mA (2N5883, 2N5885)
60
BVCEO IC=200mA (2N5884, 2N5886)
80
VCE(SAT) IC=15A, IB=1.5A
VCE(SAT) IC=25A, IB=6.25A
VBE(SAT) IC=25A, IB=6.25A
VBE(ON) VCE=4.0V, IC=10A
hFE
VCE=4.0V, IC=3.0A
35
hFE
VCE=4.0V, IC=10A
20
hFE
VCE=4.0V, IC=25A
4.0
fT
VCE=10V, IC=1.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=1.0MHz (2N5883, 2N5885)
Cob
VCB=10V, IE=0, f=1.0MHz (2N5884, 2N5886)
hfe
VCE=4.0V, IC=3.0A, f=1.0kHz
20
tr
VCC=30V, IC=10A, IB1=IB2=1.0A
ts
VCC=30V, IC=10A, IB1=IB2=1.0A
tf
VCC=30V, IC=10A, IB1=IB2=1.0A
MAX
1.0
2.0
1.0
10
1.0
1.0
4.0
2.5
1.5
100
1000
500
0.7
1.0
0.8
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
pF
pF
μs
μs
μs
R1 (4-December 2012)
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