TIP120 Просмотр технического описания (PDF) - SavantIC Semiconductor
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TIP120 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
TIP120/121/122
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP120
TIP121
TIP122
IC=0.1A, IB=0
VCE(sat)-1 Collector-emitter saturation voltage IC=3A ,IB=12mA
VCE(sat)-2 Collector-emitter saturation voltage IC=5A ,IB=20mA
VBE
Base-emitter on voltage
IC=3.0A ; VCE=3V
ICBO
Collector
cut-off current
TIP120
TIP121
TIP122
VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, IE=0
ICEO
Collector
cut-off current
TIP120
TIP121
TIP122
VCE=30V, IB=0
VCE=40V, IB=0
VCE=50V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=3V
hFE-2
DC current gain
IC=3.0A ; VCE=3V
Cob
Output capacitance
IE=0 ; VCB=10V,f=0.1MHz
MIN TYP. MAX UNIT
60
80
V
100
2.0
V
4.0
V
2.5
V
0.2
mA
1000
1000
0.5
mA
2
mA
200
pF
2
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